32514hk tc-00002975/62012tkim/n1407tiim pe no. a0963-1/5 http://onsemi.com semiconductor components industries, llc, 2014 march, 2014 MCH6321 p-channel power mosfet C 20v, C 4a, 83m ? , single mcph6 ordering information see detailed ordering and shipping information on page 2 of this data sheet. stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. features ? 1.8v drive ? protection diode in specifcations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --20 v gate-to-source voltage v gss 10 v drain current (dc) i d --4 a drain current (pulse) i dp pw 10 s, duty cycle 1% --16 a allowable power dissipation p d when mounted on ceramic substrate (1200mm 2 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7022a-009 ordering number : ena0963b product & package information ? package : mcph6 ? jeita, jedec : sc-88, sc-70-6, sot-363 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 3 4 1, 2, 5, 6 1 : drain 2 : drain 3 : gate 4 : source 5 : drain 6 : drain mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 65 4 12 3 65 4 12 3 tl jv lot no. lot no. MCH6321-tl-e MCH6321-tl-w
MCH6321 no. a0963-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =-- 1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =-- 20v, v gs =0v --1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =-- 10v, i d =-- 1ma --0.4 --1.3 v forward transfer admittance | yfs | v ds =-- 10v, i d =-- 2a 2.5 4.3 s static drain-to-source on-state resistance r ds (on)1 i d =-- 2a, v gs =-- 4.5v 63 83 m ? r ds (on)2 i d =-- 1a, v gs =-- 2.5v 88 125 m ? r ds (on)3 i d =-- 0.2a, v gs =-- 1.8v 130 200 m ? input capacitance ciss v ds =--10v, f=1mhz 375 pf output capacitance coss 77 pf reverse transfer capacitance crss 58 pf turn-on delay time t d (on) see specifed test circuit. 8.1 ns rise time t r 31 ns turn-off delay time t d (off) 40 ns fall time t f 39 ns total gate charge qg v ds =-- 10v, v gs =-- 4.5v, i d =-- 4a 4.6 nc gate-to-source charge qgs 0.8 nc gate-to-drain miller charge qgd 1.3 nc diode forward voltage v sd i s =-- 4a, v gs =0v --0.86 --1.2 v switching time test circuit ordering information device package shipping memo MCH6321-tl-e mcph6 3,000pcs./reel pb-free MCH6321-tl-w pb-free and halogen free pw=10s d.c. 1% p. g 50? g s d i d = - -2a r l =5? v dd = - -10v v out MCH6321 v in 0v - -4v v in product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
MCH6321 no. a0963-3/5 i d -- v ds i d -- v gs drain current, i d - - a drain-to-source vo ltage, v ds - - v drain current, i d - - a gate-to-source vo ltage, v gs - - v 0 -- 0.5 -- 1.0 -- 3.0 -- 2.0 -- 2.5 -- 1.5 0- -0.2 -- 0.4- -0.6 -- 0.8- -1.0 -- 0.1- -0.3 -- 0.5- -0.7 -- 0.9 it13008 0- -1.0 -- 0.5- -1.5 -- 2.5 -- 2.0 0 -- 1 -- 2 -- 3 -- 5 -- 4 - -25 c it13009 - -2.5v - -1.5v - -1.8v - -3.0v ta =75 c v ds = - -10v - -8.0v 25 c v gs = - -1.0v - -4.5v i s -- v sd drain current, i d - - a diode forward vo ltage, v sd - - v sw t ime - - i d ciss, coss, crss - - v ds switching t ime, s w t ime - - ns ciss, coss, crss - - pf drain current, i d - - a drain-to-source vo ltage, v ds - - v r ds (on) - - v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) - - m? static drain-to-source on-state resistance, r ds (on) - - m? gate-to-source vo ltage, v gs - - v ambient temperature, ta - - c it13012 it13013 0- -0.2 -- 0.4- -0.6 -- 0.8- -1.0 -- 1.2 0.1 1.0 7 5 3 2 2 10 7 5 3 -- 0.1- -1.0 -- 10 23 57 -- 0.01 23 57 23 57 ta = - -25c v ds = - -10v -- 0.001 2 3 -- 0.01 2 7 5 v gs =0v -- 0.1- -1.0 23 57 -- 10 23 57 v dd = - -10v v gs = - -4v t d (on) t d (of f) t f it13014 0- -2 -- 4- -6 1000 7 5 3 7 5 3 2 100 2 -- 8- -20 -- 10 -- 12 -- 14 -- 16 -- 18 ciss coss crss it13015 10 2 3 7 5 100 2 7 5 ta =75 c 25 c -- 25c f=1mhz t r 0- -2 -- 4- -6 -- 8 -- 1- -3 -- 5- -7 50 100 200 150 250 300 0 50 150 100 200 250 0 it13026 it13027 i d = - -0.2a - -2.0a ta =25 c - -1.0a 75 c 25 c 3 -- 0.1 2 7 5 3 -- 1.0 2 7 5 3 -- 10 7 5 -- 60 -- 40 -- 20 02 04 06 08 0 100 120 140 160 v gs = - -1.8v , i d = - -0.2a v gs = - -4.5v , i d = - -2.0a v gs = - -2.5v , i d = - -1.0a source current, i s - - a | y fs | - - i d forward tr ansfer admittance, | y fs | - - s
MCH6321 no. a0963-4/5 v gs -- qg to tal gate cha rg e, qg -- nc gate-to-source vo ltage, v gs -- v a s o drain-to-source vo ltage, v ds -- v drain current, i d -- a 05 1 234 it13028 0 -- 0.5 -- 1.0 -- 1.5 -- 2.0 -- 2.5 -- 3.0 -- 3.5 -- 4.0 -- 4.5 v ds = - -10v i d = - -4a 2 3 2 3 5 7 2 -- 0.1 3 5 7 2 -- 1.0 -- 0.01 23 53 2 7 23 57 23 57 -- 0.01 -- 0.1- -1.0 -- 10 it13029 100 s 10ms 100ms operation in this area is limited by r ds (on). i d = - -4a dc operation( ta =25 c ) i dp = - -16a 1ms 3 5 7 -- 10 pw10s ta =25 c single pulse m ounted on a ceramic board (1200m m 2 0.8mm) it13030 0 0 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.4 1.5 0.2 0.6 1.0 1.6 p d -- ta allowable power dissipation, p d -- w mounted on a ceramic board (1200m m 2 0.8mm) ambient t emperature, ta -- c
MCH6321 ps no. a0963-5/5 note on usage : since the MCH6321 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. outline drawing land pattern example MCH6321-tl-e, MCH6321-tl-w mass (g) unit 0.008 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
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